WebThe TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 … WebThe TGF2080 is designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2080 typically provides 29.5 dBm of output power at P1dB with gain 11.5 dB and 56% poweradded efficiency 1 dB ...
One watt gallium arsenide class‐E power amplifier with a thin‐film …
WebThe TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 … Web772-TGF2080 TGF2080 Waffle DC-2000 11.5dB@12GHz 13.56 11.49 9.74 772-TGF2120 TGF-2120 Die DC-2000 11dB@12GHz 20.33 17.23 14.60 772-TGF2160 TGF2160 Tray DC-2000 10.4dB@12GHz 24.05 20.38 17.27 PHEMT AMPLIFIERS For quantities greater than listed, call for quote. MOUSER STOCK NO. TriQuint Part No. Package Type Operating … se loger terrain a batir
Process Change Notification (PCN) Form - Mouser Electronics
WebPHEMT VIAS DISCRETE 800UM Datasheet(PDF) - TriQuint Semiconductor - TGF2080_15 Datasheet, 800um Discrete GaAs pHEMT, Filtronic Compound Semiconductors - LPA6836V Datasheet, Filtronic Compound Semiconductors - FPDA200V Datasheet. Electronic Components Datasheet Search English Chinese: German: Japanese: Russian: Korean: … Web600 um Discrete GaAs pHEMT, TGF2060 Datasheet, TGF2060 circuit, TGF2060 data sheet : TRIQUINT, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. Web10 May 2013 · RFMW, Ltd. announces design and sales support for TriQuint SemiconductorTGF2040, a discrete 400-Micron GaAs pHEMT FET. Designed using … se loger thann